AM3444N v ds (v) i d (a) 6.5 5.6 symbol limit units v ds 40 v gs 20 t a =25c 6.5 t a =70c 5.3 i dm 20 i s 2.6 a t a =25c 2 t a =70c 1.3 t j , t stg -55 to 150 c symbol maximum units 62.5 110 notes a. surface mounted on 1 x 1 fr4 board. b. pulse width limited by maximum junction temperature power dissipation a t <= 10 sec steady state r ja i d a p d w gate-source voltage product summary 40 r ds(on) (m) 32 @ v gs = 10v 44 @ v gs = 4.5v pulsed drain current b continuous source current (diode conduction) a thermal resistance ratings c/w parameter operating junction and storage temperature range absolute maximum ratings (t a = 25c unless otherwise noted) v parameter drain-source voltage maximum junction-to-ambient a continuous drain current a key features: ? low r ds(on) trench technology ? low thermal impedance ? fast switching speed typical applications: ? white led boost converters ? automotive systems ? industrial dc/dc conversion circuits product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
parameter symbol test conditions min typ max unit gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 ua 1 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = 32 v, v gs = 0 v 1 v ds = 32 v, v gs = 0 v, t j = 55c 25 on-state drain current a i d(on) v ds = 5 v, v gs = 10 v 10 a v gs = 10 v, i d = 5 a 32 v gs = 4.5 v, i d = 4 a 44 forward transconductance a g fs v ds = 15 v, i d = 5 a 20 s diode forward voltage a v sd i s = 1.3 a, v gs = 0 v 0.77 v total gate charge q g 3.4 gate-source charge q gs 0.7 gate-drain charge q gd 1.7 turn-on delay time t d(on) 2 rise time t r 7 turn-off delay time t d(off) 17 fall time t f 5 input capacitance c iss 287 output capacitance c oss 42 reverse transfer capacitance c rss 34 notes a. pulse test: pw <= 300us duty cycle <= 2%. b. guaranteed by design, not subject to production testing. pf v ds = 15 v, v gs = 0 v, f = 1 mhz m r ds(on) nc v ds = 20 v, r l = 4 , i d = 5 a, v gen = 10 v, r gen = 6 v ds = 20 v, v gs = 4.5 v, i d = 5 a drain-source on-resistance a zero gate voltage drain current static ua electrical characteristics i dss dynamic b ns AM3444N product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
|
